Patterning Monolayer Graphene Using Plasma Etcher For Transparent Conducting Electrode Applications

High electrical conductivity and high optical transparency characteristics of Transparent Conducting Electrode (TCE), have made graphene widely used in numerous optoelectronics device. Historically, Indium Tin Oxide (ITO), is the leading material in TCE Industry. However, due to the lack of materials and high cost of production, another alternative is greatly needed which lead to the founding of graphene. Graphene has high electrical conductivity. However, it is still a challenge for the researcher in producing single layer graphene with high accuracy and high resolution due to the temperature requirement during the etching process. Therefore, a new technique of patterning monolayer graphene using oxygen plasma etcher is approached. The plasma etching process were optimized producing to 50 micronmeter resolution with 10% error and the accuracy and quality of graphene were assessed using Optical Microscope and Raman Spectroscopy. This technique essentially deals with patterning graphene using positive photoresist as blocking layer by photolithography process and another blocking layer which is aluminium was used by lift off process. Then the unexposed graphene was removed by oxygen plasma process.