CHARACTERIZATION OF A CMOS-MEMS DEVICE FOR THE DETECTION OF WEAK VIBRATION

The paper review about the usage of the integration between Complementary Metal Oxide System and Micromechanical system (CMOS-MEMS device) for the detection of weak vibration. The available CMOS-MEMS device at Universiti Teknologi PETRONAS is the device that has high resonance frequency which is 6.160 kHz. For this project, the student need to use the device to detect weak vibration which is in frequency range between 1 kHz to 3 kHz. The scope of studies for this project are to calculate the CMOS-MEMS parameters such as spring constant, resonance frequency and quality factor of the device. Besides, student need to do theoretically characterization of the device by using Finite Element Analysis (FEA) simulation software and lastly conduct experimental characterization of the device to verify the result obtain from the calculation and simulation. The parameters of the device can be calculated using the equation provided in this paper. After the result obtained, the project proceeds by conducting FEA simulation using CoventorWare to verify the result obtain earlier. Lastly, the process will be done by experimental characterization of the device by using equipment in the lab. As stated before, the resonance frequency of the CMOS-MEMS device is 6.1610 kHz. So, the frequency of the device need to be reduced by increasing the mass of the device. As calculated, addition of 11.1458 x 10-9 kg mass need to be added to achieve 2.53 kHz of the resonance frequency. In conclusion, the resonance frequency can be changed either by changing the width of the beam or increase the mass of the device. For this project, the device need to be added with some additional mass to get targeted resonance frequency.