Study and Analysis of Power MOSFET Characteristics in Radiation Environment

Semiconductor devices are playing a vital role in the industry of integrated
circuits and solid state devices because of their fast switching speeds and low power
consumption capabilities. Effects of radiations in space can cause changes in the
electrical characteristics causing threshold voltage shifts and drain current degradation.
Damaging mechanisms such as Displacement Damage, Single Event Effects (SEE),
Total Ionization Dose (TID) effects are sole reason of these effects.