Welcome To UTPedia

We would like to introduce you, the new knowledge repository product called UTPedia. The UTP Electronic and Digital Intellectual Asset. It stores digitized version of thesis, dissertation, final year project reports and past year examination questions.

Browse content of UTPedia using Year, Subject, Department and Author and Search for required document using Searching facilities included in UTPedia. UTPedia with full text are accessible for all registered users, whereas only the physical information and metadata can be retrieved by public users. UTPedia collaborating and connecting peoples with university’s intellectual works from anywhere.

Disclaimer - Universiti Teknologi PETRONAS shall not be liable for any loss or damage caused by the usage of any information obtained from this web site.Best viewed using Mozilla Firefox 3 or IE 7 with resolution 1024 x 768.

EFFECTS OF PHOTOANODE THICKNESS ON THE PERFORMANCE OF DSSC SIMULATED USING EQUIVALENT CIRCUIT

JAMALUDIN, JUFRI HAZLAN BIN (2012) EFFECTS OF PHOTOANODE THICKNESS ON THE PERFORMANCE OF DSSC SIMULATED USING EQUIVALENT CIRCUIT. UniversitiTeknologi PETRONAS.

[img]
Preview
PDF
Download (1383Kb) | Preview

Abstract

In DSSC or any other solar cells, thick absorption layer is preferable as it can maximize the photo-generation of carriers. Unfortunately, the photo-generated carriers need to traverse through the thick layer before it can be collected at the photo-electrodes. This may lead to unwanted phenomena such as loss of photo-generated carriers due to recombination, increase in resistivity, and drop in mobility. For optimization purposes, the balance between thick absorption layer and these unwanted phenomena need to be fully understood and will be investigated. In this work, three DSSCs with 6, 12 and 18 μm absorption layer thickness were fabricated and their current-voltage (IV) characteristics measured. To model the DSSC, a lumped parameter equivalent circuit model consisting of a single exponential-type ideal junction, a constant photo-generated current source, a series parasitic resistance (Rs) and a parallel parasitic conductance (Rsh) was used. The measured and modeled IV characteristics fit reasonably well. From the model, it is shown that both Rs and Rsh will be increased as the thickness of the absorption layer increases. It is also shown that by varying Rs the fill factor will decreased, while the efficiency of the solar cells are decreasing as the material gets thicker.

Item Type: Final Year Project
Subject: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Engineering > Electrical and Electronic
Depositing User: Users 1278 not found.
Date Deposited: 05 Oct 2012 09:54
Last Modified: 25 Jan 2017 09:40
URI: http://utpedia.utp.edu.my/id/eprint/4026

Actions (login required)

View Item View Item

Document Downloads

More statistics for this item...