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Single-charge detection using ultrathin Si single-hole-tunneling transistors

Burhanudin, Zainal Arif (2007) Single-charge detection using ultrathin Si single-hole-tunneling transistors. PhD thesis, Shizuoka University.

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Abstract

Single-charge-tunneling devices can be considered as one of the most sensitive charge sensors. My group has previously fabricated single-holetunneling transistors (SHT) using Si-on-insulator (SOl) wafer with ultrathin Si layer(< 10 nm) and demonstrated that they can be utilized as single-photon detectors or single-charge detectors. However, there are two problems remaining, i.e., thermal instability of the thin Si layer and low quantum efficiency (QE) due to thin photon absorbing layer. Thus, the purposes of this work are to study the thermal instability of the ultrathin Si layer and to improve the QE by fabricating SHT with an additional photon absorption layer in the SOl substrate. In the study of the thermal instability of ultrathin Si layer, the experiments for three crystalline orientations revealed that the Si agglomerations occur due to high temperature annealing in ultrahigh vacuum. More interestingly, it was also found that low surface free-energy facets in certain crystalline orientations determine the shape and the alignment of the agglomerated Si, e.g., islands for (1 00) and (11 0}, and wires for (111) oriented Si. Concerning the QE improvement, the ionization of single-acceptor atoms within the additional photon absorption layer was successfully detected. This is the basis of the detection of photo-generated single-charges and higher QE. As a summary, this work has been pe!rformed for the purposes of clari- 1 fying the thermal instability of ultrathin si layer and QE-improvement of I photon-sensitive SHT transistors. As a result, the ionization of single-dopant I has been detected successfully. This will be the first step towards high QE photon detectors.

Item Type: Thesis (PhD)
Academic Subject : Academic Department - Electrical And Electronics - Pervasisve Systems - Digital Electronics - Design
Subject: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Engineering > Electrical and Electronic
Depositing User: Users 2053 not found.
Date Deposited: 27 Sep 2013 12:17
Last Modified: 25 Jan 2017 09:45
URI: http://utpedia.utp.edu.my/id/eprint/7080

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