Performance Analysis Of Carbide Element in DC-DC Converter

This report study on the performance analysis ofcarbide element in a DC-DC Converter
by having comparisons between Silicon Schottky and Silicon Carbide Schottky Diode in
terms of their reverse recovery current, reverse recovery losses and the MOSFET turnon
losses. The results of the analysis had proven how much the carbide element in a
Silicon Carbide Schottky Diode effects in the output results. The inductiveload chopper
circuit was chosen to be used in PSpice simulation to study the characteristics of both
Silicon Carbide Schottky and Silicon Schottky diode. The efficiency of Silicon Carbide
Schottky diode was proven to be improved by 96.16% compared to Silicon Schottky
diode. The Silicon Schottky and Silicon Carbide Schottky diode investigated in this
project were both unipolar, therefore the effect of carbide could be distinguished by
analyzing the outputsproducedby Silicon Carbide Schottky diode.