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Performance Analysis Of Carbide Element in DC-DC Converter

RAMLE, FAIRUZ HANISAH (2007) Performance Analysis Of Carbide Element in DC-DC Converter. Universiti Teknologi PETRONAS. (Unpublished)

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Abstract

This report study on the performance analysis ofcarbide element in a DC-DC Converter by having comparisons between Silicon Schottky and Silicon Carbide Schottky Diode in terms of their reverse recovery current, reverse recovery losses and the MOSFET turnon losses. The results of the analysis had proven how much the carbide element in a Silicon Carbide Schottky Diode effects in the output results. The inductiveload chopper circuit was chosen to be used in PSpice simulation to study the characteristics of both Silicon Carbide Schottky and Silicon Schottky diode. The efficiency of Silicon Carbide Schottky diode was proven to be improved by 96.16% compared to Silicon Schottky diode. The Silicon Schottky and Silicon Carbide Schottky diode investigated in this project were both unipolar, therefore the effect of carbide could be distinguished by analyzing the outputsproducedby Silicon Carbide Schottky diode.

Item Type: Final Year Project
Academic Subject : Academic Department - Electrical And Electronics - Pervasisve Systems - Analogue Electronics - Yield Analysis
Subject: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Engineering > Electrical and Electronic
Depositing User: Users 2053 not found.
Date Deposited: 24 Oct 2013 09:50
Last Modified: 25 Jan 2017 09:45
URI: http://utpedia.utp.edu.my/id/eprint/9592

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