DEVELOPMENT OF BORON DOPED REDUCED GRAPHENE OXIDE FOR AC ELECTROLUMINESCENCE EMISSION FROM HETEROSTRUCTURE DEVICE

In recent years, graphene-based light-emitting devices have become the key focus in the field of display technology. Graphene is zero bandgap material, and the bandgap can be induced in graphene by the chemical substitution doping for the electroluminescent emissions. The induced bandgap in graphene is unstable because graphene-based active layer become oxidized in open air environment. The oxidation of graphene makes the light emission process temporary and also limits the light-emitting area. The Electroluminescence (EL) effect from graphene can be observed through heteroatom doping by inducing the optical bandgap with the energy density of states (DOS). The boron-doped reduced graphene is proposed as an active layer for the heterostructure light-emitting device, which inhibit the oxidation of the active layer. In this work, microwave-assisted hydrothermal synthesis of boron-doped reduced graphene oxide (B-rGO) and an active layer for a heterostructure light-emitting device, is performed.