BACKEND DESIGN OF WIDEBAND LOW NOISE AMPLIFIER USING 130 NM RF CMOS TECHNOLOGY

Low Noise Amplifier (LNA) is widely applied nowadays for amplify very weak signals usually captured by antenna with reduced noise due to the gain of the LNA. Thus the main concern in this paper is in designing an LNA for ultra-wideband which cover frequency ranging from 3.1 GHz to 10.6 GHz. The design of the circuit is implemented using the 130 nm complementary metal-oxide semiconductor (CMOS) technology. Comparative studies have been done between inductive degeneration and common gate configuration with special consideration in terms of the corresponding noise figure.