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BACKEND DESIGN OF WIDEBAND LOW NOISE AMPLIFIER USING 130 NM RF CMOS TECHNOLOGY

Junaidi, Muhammad Syafiq (2015) BACKEND DESIGN OF WIDEBAND LOW NOISE AMPLIFIER USING 130 NM RF CMOS TECHNOLOGY. IRC, Universiti Teknologi PETRONAS. (Unpublished)

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Abstract

Low Noise Amplifier (LNA) is widely applied nowadays for amplify very weak signals usually captured by antenna with reduced noise due to the gain of the LNA. Thus the main concern in this paper is in designing an LNA for ultra-wideband which cover frequency ranging from 3.1 GHz to 10.6 GHz. The design of the circuit is implemented using the 130 nm complementary metal-oxide semiconductor (CMOS) technology. Comparative studies have been done between inductive degeneration and common gate configuration with special consideration in terms of the corresponding noise figure.

Item Type: Final Year Project
Academic Subject : Academic Department - Electrical And Electronics - Pervasisve Systems - Digital Electronics - Design
Subject: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Engineering > Electrical and Electronic
Depositing User: Ahmad Suhairi Mohamed Lazim
Date Deposited: 27 Aug 2015 16:30
Last Modified: 25 Jan 2017 09:36
URI: http://utpedia.utp.edu.my/id/eprint/15572

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