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STUDY THE EFFECT OF GATE OXIDE THICKNESS AND LDD DOPING PROFILE ON THE PERFORMANCE OF LDMOS BY USING SIMULATOR

RAJA DAUD, RAJA SAHARUDDIN (2007) STUDY THE EFFECT OF GATE OXIDE THICKNESS AND LDD DOPING PROFILE ON THE PERFORMANCE OF LDMOS BY USING SIMULATOR. Universiti Teknologi PETRONAS. (Unpublished)

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Abstract

LDMOS is a silicon deviceand has been provento be a populardevice in high power RF application. It has excellent efficiency, linearity and peak power capability. The LDMOS roadmap is always to improve intrinsic die performance in key areas such as efficiency, gain and continuing focus on cost - effective device packaging. The objective ofthis work is to study the effect of gate oxide thickness and LDD doping profile on performance ofLDMOS for high power RF applications by using Silvaco TCAD simulator as a part of work to improve its performance. The work is done by varying the gate oxide thickness, Tox from 200 Aup to 700 Aand varying LDD doping profile, ND from 2xl010cm"3 to 2xl013cm"3. The performance ofLDMOS is analyzed by investigating the effect on the following parameters: VT> gm,fu Ciss, BV. Theresults obtained shows that as gate oxide thickness, Tox is increased; VT and/, are increased while magnitude of gm, Ciss and BV are reduced. Besides, as LDD concentration, ND is increased, VT, magnitude of gm, and / are increased while magnitude of C^, and BFare reduced. The fundamental of semiconductor device fabrication is studiedand understood while the knowledge of using both process and device simulator (Athena & Atlas) has been acquired.

Item Type: Final Year Project
Academic Subject : Academic Department - Electrical And Electronics - Pervasisve Systems - Digital Electronics - Design
Subject: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Engineering > Electrical and Electronic
Depositing User: Users 2053 not found.
Date Deposited: 24 Oct 2013 14:41
Last Modified: 25 Jan 2017 09:45
URI: http://utpedia.utp.edu.my/id/eprint/9629

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