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THE MODELING & SIMULATION OF SHORT CHANNEL EFFECTS IN MOSFETS

ABDUL HALIM, ASMAH (2007) THE MODELING & SIMULATION OF SHORT CHANNEL EFFECTS IN MOSFETS. Universiti Teknologi PETRONAS. (Unpublished)

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Abstract

This is the Final Year Project Final Report of Universiti Teknologi PETRONAS Final Year Student, Asmah binti Abdul Halim (4092) on The Modeling and Simulation of Short Channel Effect in the MOSFET. This report is organized as follow: Chapter 1 (Introduction) explains on the background study of project, problem statement, as well as the objective and scope of study. Due to expanding technology, the scale of device is getting smaller. This has caused the channel length between source and drain of MOSFETs to be reduced as well, in order to better achieve flow of electron for faster speed in its application. However, this has resulted in short channel that has it effects. Thus, the objective of this project is observing the short channel effect and yet discovers ways to reduce the effects. Chapter 2 is the literature review of the project which describes on the MOSFET physical structure, MOSFET fabrication, MOSFET scaling phenomenon as well as the short channel effects been encountered. It is realized that this topic will be emphasizing more on the threshold voltage aspect as this voltage distinguishes the conduction from the non-conduction states of MOS transistor. ATHENA and ATLAS module of SILVACO software are the tools used in simulating the fabrication and also the electrical performance of the transistors. This is fully described in Chapter 3. Chapter 4 presents the result obtained from the process simulation (ATHENA), followed by the device simulation (ATLAS). Short channel symptoms been observed on the short channel device by considering few related parameters, followed by few adjustments been done to reduce this problem. The conclusion and recommendation parts wrapped up this report which can be found in the Chapter 5. This project of using SILVACO software is really useful in order to observe the short channel effect, realizing that theMOS technology has beengrowing at an incredible rate since the development of the first MOSFET. Identifying yet overcoming the effect is the ultimate goal ofthis project.

Item Type: Final Year Project
Academic Subject : Academic Department - Electrical And Electronics - Pervasisve Systems - Microelectronics - Device Modelling
Subject: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Engineering > Electrical and Electronic
Depositing User: Users 2053 not found.
Date Deposited: 24 Oct 2013 10:30
Last Modified: 25 Jan 2017 09:45
URI: http://utpedia.utp.edu.my/id/eprint/9634

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