DESIGN OF 10 GHZ MICROWAVE OSCILLATOR

Microwave oscillators are widely used in various applications such as communication, military and consumer electronics. They are the main component that generate electronic signal in order to carry message through transmission medium to destination. Thus, the importance to understand the operation and design of a microwave oscillator is significant. Hence, this project aims to design a microwave oscillator, where the operating frequency is centered at 10 GHz. This project focuses solely on the design of microwave components and software simulation in linear schematic diagram as well as microstrip layout. Negative conductance method is used to design a reliable microwave oscillator. Low noise L to Ku-band GaAs MESFET NE76038 has been chosen as a suitable FET to be used in basic oscillator topology. The conductance value of the microwave oscillator is found to be -0.2546S, while the susceptance value is approximately 9.82mS, capacitive. Schematic diagram and microstrip layout implementation of microwave oscillator are done using AWR Microwave Office. Several necessary graphs are plotted to verify the calculation that based on the theory. This final report is divided to several chapters, recording the background of study, the literature review on theory, the methodology, the findings based on oscillator design step and the suggested future work for expansion and continuation respectively. Overall, this project is considered to be successful but there is still some modifications could be done on the design in order to improve the performance of microwave oscillator.