Total Ionizing Dose and Single Event Effect Radiation effects in SiC SCT10N120 Power MOSFET

Rajendran, Vishandh (2018) Total Ionizing Dose and Single Event Effect Radiation effects in SiC SCT10N120 Power MOSFET. [Final Year Project]

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Abstract

Silicon Carbide Power MOSFET is type of high power switching device which is used in
the space application, avionics and military applications. Silicon Carbide Power
MOSFFETs are much favorable nowadays not only because of its fast switching
capabilities and amplifying capabilities but also due to its high Voltage and current
handling capacity. At the space, the power MOSFETs are used in satellites for DC-DC
converters such as buck converter or boost converter. These type converters provide stepup
or step-down in DC voltage for the satellites. But due to the harmful radiation on the
surrounding such as the outer space, these Power MOSFETs gets exposed and tends to
perform poorly. The longer the exposure the higher the effect on the Power MOSFET.
Sometimes single charged particle can cause the Power MOSFET to completely fail from
performing.

Item Type: Final Year Project
Departments / MOR / COE: Engineering > Electrical and Electronic
Depositing User: Mr Ahmad Suhairi Mohamed Lazim
Date Deposited: 20 Jun 2019 08:32
Last Modified: 20 Jun 2019 08:32
URI: http://utpedia.utp.edu.my/id/eprint/19213

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