I-V CHARACTERISTICS OF GRAPHENE FIELD EFFECT TRANSISTOR

Graphene FET (GFET) has attracted a lot of attention and has become the subject of
intense research. In this project, GFET is fabricated. Monolayer graphene is produced using
chemical vapour deposition which has been said to be the most convincing method to
produce high quality graphene. There are several structures of GFET which are back gate,
dual gate, inverted back gate and epitaxial graphene structure. In this work GFET design will
follow the standard single device with bottom gated MOSFET design. Fabrication of the
GFET is done at a small scale, low volume condition. Next, of all the devices are
characterized using Agilent semiconductor Parametric Analyzer to observe the device
current-voltage(I-V) characteristic. It is found that during the fabrication process the source
& drain made a contact with gate due to misalignment. Therefore, I-V characteristic of GFET
is not as expected. In the future works it is proposed that the SiO2 layer on top of the gate
will be made larger to prevent the source & drain touching the gate in case of misalignment
happened.