Welcome To UTPedia

We would like to introduce you, the new knowledge repository product called UTPedia. The UTP Electronic and Digital Intellectual Asset. It stores digitized version of thesis, dissertation, final year project reports and past year examination questions.

Browse content of UTPedia using Year, Subject, Department and Author and Search for required document using Searching facilities included in UTPedia. UTPedia with full text are accessible for all registered users, whereas only the physical information and metadata can be retrieved by public users. UTPedia collaborating and connecting peoples with university’s intellectual works from anywhere.

Disclaimer - Universiti Teknologi PETRONAS shall not be liable for any loss or damage caused by the usage of any information obtained from this web site.Best viewed using Mozilla Firefox 3 or IE 7 with resolution 1024 x 768.

Simulation and Study of an Insulated Gate Bipolar Transistor (IGBT) for Medium Power Application

Mohamad@Hamid, Mohd Khairun Affandy (2007) Simulation and Study of an Insulated Gate Bipolar Transistor (IGBT) for Medium Power Application. Universiti Teknologi PETRONAS. (Unpublished)

[img] PDF
Download (1436Kb)


Insulated Gate Bipolar Transistor (IGBT) is one of the switching devices which is widely use in medium power application. IGBT provide the characteristic of almost ideal switch for very high voltage and current level. The advantage of IGBT is that is uses the high current density bipolar application which will result in low conduction loss. The main objective of this project is to investigate and study on the devices structuring process involves in creating IGBT. The focus of this project is to improve the performance of the existing design which is commercially available. This project was done by familiarizing with the semiconductor fabrication software. During this period, simulation of the NMOS fabrication structure was done using the ATHENA and ATLAS software. Then, the available example of the IGBT will be loaded, the structure of the IGBT will be reviewed and electrical performance of the IGBT will be evaluated. The IGBT structure will be modified in order to investigate whether the modified IGBT performance will improve or become worst. The expected result should be the new structure of the modified IGBT with improves performance and comparison data between the conventional IGBT and modified IGBT. Due to some technical problem occur during handling this project, student are not able to produce the expected result. Due to this problem, student are required to do study on the IGBT design for reducing EMI effect in order to backup the result of this project due to technical problem occur.

Item Type: Final Year Project
Academic Subject : Academic Department - Electrical And Electronics - Power Systems - Transmission - Systems Design
Subject: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Engineering > Electrical and Electronic
Depositing User: Users 2053 not found.
Date Deposited: 24 Oct 2013 10:12
Last Modified: 25 Jan 2017 09:45
URI: http://utpedia.utp.edu.my/id/eprint/9618

Actions (login required)

View Item View Item

Document Downloads

More statistics for this item...