Simulation and Study of an Insulated Gate Bipolar Transistor (IGBT) for Medium Power Application

Insulated Gate Bipolar Transistor (IGBT) is one of the switching devices which is widely
use in medium power application. IGBT provide the characteristic of almost ideal switch
for very high voltage and current level. The advantage of IGBT is that is uses the high
current density bipolar application which will result in low conduction loss. The main
objective of this project is to investigate and study on the devices structuring process
involves in creating IGBT. The focus of this project is to improve the performance of the
existing design which is commercially available. This project was done by familiarizing
with the semiconductor fabrication software. During this period, simulation of the NMOS
fabrication structure was done using the ATHENA and ATLAS software. Then, the
available example of the IGBT will be loaded, the structure of the IGBT will be reviewed
and electrical performance of the IGBT will be evaluated. The IGBT structure will be
modified in order to investigate whether the modified IGBT performance will improve or
become worst. The expected result should be the new structure of the modified IGBT
with improves performance and comparison data between the conventional IGBT and
modified IGBT. Due to some technical problem occur during handling this project,
student are not able to produce the expected result. Due to this problem, student are
required to do study on the IGBT design for reducing EMI effect in order to backup the
result of this project due to technical problem occur.