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PERFORMANCE STUDY OF 1 BIT STATIC RAM BASED ON PROCESS TECHNOLOGIES

MD TUMIRAN, NADIAH (2011) PERFORMANCE STUDY OF 1 BIT STATIC RAM BASED ON PROCESS TECHNOLOGIES. Universiti Teknologi Petronas. (Unpublished)

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Abstract

A basic memory cell of Static Random Access Memory (SRAM) topology consists of four transistors which act as a flip flop and two more transistors will act as pass transistor. In this study, experiment is done by varying the values of different variables that can affect the performance of basic memory cell. Among the variables are magnitudes of voltage supply, temperature, clock frequency and process technology to be used in fabrication of memory cell. These variables will have their own limit due to the configuration of circuit and properties transistor parameters in the memory cell. These values will determine the performance of the memory cell. The studies are carried out using various process technologies by simulation at schematic level. The results show that higher clock frequency will require higher value of supplied voltage. Lower supplied voltage will make SRAM failed to operate at high temperature. Different process technology will also influence the value for minimum supplied voltage used and temperature range that the SRAM circuit can operate properly. The process technology of hpl4tb has the minimum voltage supply of0.83 Vat 5 MHz while amil6 has the widest effective range temperature from -229°C to 224°C at IOOMHz and 1.3 V simulation. iv

Item Type: Final Year Project
Academic Subject : Academic Department - Electrical And Electronics - Pervasisve Systems - Digital Electronics - Programmable Devices
Subject: T Technology > TJ Mechanical engineering and machinery
Divisions: Engineering > Electrical and Electronic
Depositing User: Users 2053 not found.
Date Deposited: 09 Oct 2013 11:07
Last Modified: 25 Jan 2017 09:42
URI: http://utpedia.utp.edu.my/id/eprint/8318

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