PERFORMANCE STUDY OF 1 BIT STATIC RAM BASED ON PROCESS TECHNOLOGIES

A basic memory cell of Static Random Access Memory (SRAM) topology
consists of four transistors which act as a flip flop and two more transistors will
act as pass transistor. In this study, experiment is done by varying the values of
different variables that can affect the performance of basic memory cell. Among
the variables are magnitudes of voltage supply, temperature, clock frequency and
process technology to be used in fabrication of memory cell. These variables will
have their own limit due to the configuration of circuit and properties transistor
parameters in the memory cell. These values will determine the performance of
the memory cell. The studies are carried out using various process technologies by
simulation at schematic level. The results show that higher clock frequency will
require higher value of supplied voltage. Lower supplied voltage will make
SRAM failed to operate at high temperature. Different process technology will
also influence the value for minimum supplied voltage used and temperature
range that the SRAM circuit can operate properly. The process technology of
hpl4tb has the minimum voltage supply of0.83 Vat 5 MHz while amil6 has the
widest effective range temperature from -229°C to 224°C at IOOMHz and 1.3 V
simulation.
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